文献详情
Two-dimensional non-volatile programmable p-n junctions
文献类型期刊论文
作者Li, Dong[1];Chen, Mingyuan[2];Sun, Zhengzong[3];Yu, Peng[4];Liu, Zheng[5];Ajayan, Pulickel M.[6];Zhang, Zengxing[7]
机构
通讯作者Zhang, ZX (reprint author), Tongji Univ, Sch Phys Sci & Engn, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R China.; Liu, Z (reprint author), Nanyang Technol Univ, Sch Mat Sci & Engn, Ctr Programmed Mat, Singapore 639798, Singapore.; Ajayan, PM (reprint author), Rice Univ, Dept Mech Engn & Mat Sci, Houston, TX 77005 USA.; Zhang, ZX (reprint author), Tongji Univ, Inst Dongguan, Dongguan 523808, Peoples R China.
2017
期刊名称NATURE NANOTECHNOLOGY影响因子和分区
12
9
页码范围901-+
增刊正刊
学科材料科学
收录情况SCI(E)(WOS:000409361800017)  PubMed(28604709)  
所属部门物理科学与工程学院
语言外文
ISSN1748-3387
DOI10.1038/NNANO.2017.104
被引频次11
人气指数294
浏览次数293
基金Natural Science Foundation of Shanghai [16ZR1439400, 17ZR1447700]; National Natural Science Foundation of China [11104204, 21301032]; National Key Research and Development Program of China [2016YFA0203900]; Singapore National Research Foundation under NRF RF Award [NRF-RF2013-08]; MOE through the BRI program, 'Science and Emerging Technology of 2D Atomic Layered Materials and Devices' - United States Air Force Office of Scientific Research (AFOSR) [MOE2015-T2-2-007, BAA-AFOSR-2013-0001]
摘要Semiconductor p-n junctions are the elementary building blocks of most electronic and optoelectronic devices. The need for their miniaturization has fuelled the rapid growth of interest in two-dimensional (2D) materials. However, the performance of a p-n junction considerably degrades as its thickness approaches a few nanometres and traditional technologies, such as doping and implantation, become invalid at the nanoscale. Here we report stable non-volatile programmable p-n junctions fabricated from the vertically stacked all-2D semiconductor/insulator/metal layers (WSe2/hexagonal boron nitride/graphene) in a semifloating gate field-effect transistor configuration. The junction exhibits a good rectifying behaviour with a rectification ratio of 104 and photovoltaic properties with a power conversion efficiency up to 4.1% under a 6.8 nW light. Based on the non-volatile programmable properties controlled by gate voltages, the 2D p-n junctions have been exploited for various electronic and optoelectronic applications, such as memories, photovoltaics, logic rectifiers and logic optoelectronic circuits.
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